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Strategies for lowering down the contact resistance of organic field-effect transistors


Mr. Wanli Yang

PhD candidate in the Mechanical Engineering Dept.

Date & Time

Friday, 30 April 2021

8:00 am


Via Zoom


The contact resistance in organic field-effect transistors (OFET) is one of the important factors limiting the charge injection through the metal/semiconductor interface. The misalignment between the fermi level of metal electrode and Lowest Unoccupied Molecular Orbital (LUMO) for n-channel transistors or Highest occupied Molecular Orbital (HOMO) for p-channel transistors and the access resistance through multilayers are two bottlenecks blocking the lowering of contact resistance. In this presentation. the dopants engineering applied on the metal/semiconductor interface adjusting the energy level of metal electrodes and the orientation alignment of organic semiconductor by solution shearing are two effective strategies to overcome the challenges mentioned above.

Research Areas:

Advanced Materials

Contact for


Dr. P.K.L. Chan

+(852) 3917 2634

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