Strategies for lowering down the contact resistance of organic field-effect transistors
Mr. Wanli Yang
PhD candidate in the Mechanical Engineering Dept.
Date & Time
Friday, 30 April 2021
The contact resistance in organic field-effect transistors (OFET) is one of the important factors limiting the charge injection through the metal/semiconductor interface. The misalignment between the fermi level of metal electrode and Lowest Unoccupied Molecular Orbital (LUMO) for n-channel transistors or Highest occupied Molecular Orbital (HOMO) for p-channel transistors and the access resistance through multilayers are two bottlenecks blocking the lowering of contact resistance. In this presentation. the dopants engineering applied on the metal/semiconductor interface adjusting the energy level of metal electrodes and the orientation alignment of organic semiconductor by solution shearing are two effective strategies to overcome the challenges mentioned above.